Bidirectional semiconductor device is___________?

Related Mcqs:

If the anode current is 800 A, then the amount of current required to turn off the GTO is about____________?

A. 20 A B. 200 A C. 600 A D. 400 A...

Rise time is defined by the interval when____________?

A. gate current rises from 90 % to 100 % of it final value B. anode voltage drops from 90 % to 10 % of its initial value C. anode current rises 10 % to 90 % of its final value D. both B and C...

The power demand can be estimated approximately by___________?

A. Load survey method B. Mathematical method C. Statistical method D. Economic parameters...

The effects of EMI can be reduced by____________?

A. Suppressing emissions B. Reducing the efficiency of the coupling path C. Reducing the susceptibility of the receptor D. All of these...

The conduction losses in IGBT is____________?

A. More than that of MOSFET B. Lower than that of MOSFET C. Equal to that of MOSFET D. Equal to that of BJT...