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.Management Sciences
Category: Transistor Biasing
In the design of a biasing circuit, the value of collector load RC is determined by__________________?
0
A. VCE consideration
B. VBE consideration
C. IB consideration
D. None of the above
A silicon transistor is biased with base resistor method. If ß=100, VBE =0.7 V, zero signal collector current IC = 1 mA and VCC = 6V , what is the value of the base resistor RB ?
A. 105 kO
B. 530 kO
C. 315 kO
D. None of the above
For faithful amplification by a transistor circuit, the value of VCE should______________for silicon transistor?
A. Not fall below 1 V
B. Be zero
C. Be 0.2 V
D. None of the above
When the temperature changes, the operating point is shifted due to _______________?
A. Change in ICBO
B. Change in VCC
C. Change in the values of circuit resistance
D. None of the above
The disadvantage of base resistor method of transistor biasing is that it_________________?
A. Is complicated
B. Is sensitive to changes in ß
C. Provides high stability
D. None of the above
Thermal runaway occurs when_________________?
A. Collector is reverse biased
B. Transistor is not biased
C. Emitter is forward biased
D. Junction capacitance is high
In a transistor amplifier circuit VCE = VCB +________________?
A. VBE
B. 2VBE
C. 5 VBE
D. None of the above
The operating point ________________ on the a.c. load line?
A. Also line
B. Does not lie
C. May or may not lie
D. Data insufficient
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