Category: Power Electronics

A. silicon has large leakage current than germanium
B. silicon has small leakage current than germanium
C. silicon has small leakage voltage than germanium
D. silicon has large leakage voltage than germanium

A. Unidirectional
B. Bidirectional
C. Fixed voltage polarity
D. Only (a) and (c)

A. TRIACs
B. Semi conductor diodes
C. MOSFETs
D. Thyristor

A. 1 KVA
B. 2 KVA
C. 500 VA
D. 100 KVA

A. Current controlled unipolar device
B. Voltage controlled unipolar device
C. Current controlled bipolar device
D. Voltage controlled bipolar device

A. Directly proportional to Vm of supply voltage
B. Inversely proportional to Vm of supply voltage
C. Inversely proportional to L in the circuit
D. Both A and C

A. BJT
B. Power MOSFET
C. Schottky diode
D. Microwave transistor

A. Directly proportional to their harmonic order
B. Inversely proportional to their harmonic order
C. Not related to their harmonic order
D. None of these

A. 2nd
B. 3rd
C. 5th
D. 7th

A. gate current increases from 90 % to 100 % of its final value
B. anode current reaches 10 % from forward leakage current
C. anode voltage drops from 100 % to 90 % of its actual value
D. all of these