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.Management Sciences
Category: Power Electronics
During gate recovery time_____________?
A. charge carriers of J2 junction recombined
B. charge carriers of J2 junction is swept out
C. charge carrier of J1 junction removed
D. charge carriers of J3 junction is removed
An SCR is made up of silicon because?
A. silicon has large leakage current than germanium
B. silicon has small leakage current than germanium
C. silicon has small leakage voltage than germanium
D. silicon has large leakage voltage than germanium
An ideal diode is___________?
A. Unidirectional
B. Bidirectional
C. Fixed voltage polarity
D. Only (a) and (c)
Compared to transistor, _________ have lower on state conduction losses and higher power handling capability?
A. TRIACs
B. Semi conductor diodes
C. MOSFETs
D. Thyristor
COOLMOS device can be used in application up to power range of___________?
A. 1 KVA
B. 2 KVA
C. 500 VA
D. 100 KVA
The power MOSFET device is a___________?
A. Current controlled unipolar device
B. Voltage controlled unipolar device
C. Current controlled bipolar device
D. Voltage controlled bipolar device
Maximum di / dt in a SCR is________?
A. Directly proportional to Vm of supply voltage
B. Inversely proportional to Vm of supply voltage
C. Inversely proportional to L in the circuit
D. Both A and C
Which one is most suitable power device for high frequency (>100 KHz) switching application?
A. BJT
B. Power MOSFET
C. Schottky diode
D. Microwave transistor
The square wave operation of 3 phase VSI lines contains the harmonics. The amplitudes are____________?
A. Directly proportional to their harmonic order
B. Inversely proportional to their harmonic order
C. Not related to their harmonic order
D. None of these
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