Category: Power Electronics

A. Insulated gate bipolar transistor
B. Insulated gate bidirectional transistor
C. Inductive gate bipolar transistor
D. Inductive gate bidirectional transistor

A. Two dimensional functions
B. Three dimensional functions
C. One dimensional functions
D. All of these

A. Do not contribute to the collector current
B. Result in net current flow component into the base
C. Contribute to the collector current
D. Only (a) and (b)
E. Only (b) and (c)

A. Dependent on the load current
B. Dependent on the voltage
C. Dependent on both the load current and load voltage behind the short circuit current
D. Independent on both the load current and load voltage

A. 180 degree
B. 190 degree
C. 200 degree
D. 210 degree

A. Rms value of the ac component of load voltage to the dc voltage
B. Average value of the ac component of load voltage to the peak value of voltage
C. Average value of the dc component of load voltage to the ac voltage
D. Peak value of the dc component of load voltage to the ac voltage

A. series connection.
B. parallel connection.
C. anti parallel connection.
D. both B and C.

A. Divert the collector current during turn – off
B. Improves the reverse bias safe operating area
C. Dissipates a fair amount of switching power
D. All of these

A. Decrease with frequency
B. Remains same with change in frequency
C. Increase with frequency
D. Either A. or B.

A. V m
B. 2 V m
C. V m / 2
D. 4 V m